| PART |
Description |
Maker |
| IDT70T3599S200DRI IDT70T3519 IDT70T3519S133BC IDT7 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| IDT70T3519S133DR IDT70T3519S133BC |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT70V3589 IDT70V3589S IDT70V3589S133BC IDT70V3589 |
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| P87C51FB 80C32 80C51RA 83C51RB 83C51RC 83C51RA 83C |
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless, low voltage 2.7V.5.5V, low power, high speed 33 MHz
|
Philips Semiconductors
|
| P87C51 |
80C51 8-bit microcontroller family 4 K/8 K OTP/ROM low voltage (2.7 V-5.5 V), low power, high speed (33 MHz), 128/256 B RAM
|
Philips
|
| CY7C192-15VXC |
64K x 4 Static RAM with Separate IO; Density: 256 Kb; Organization: 64Kb x 4; Vcc (V): 4.5 to 5.5 V; 64K X 4 STANDARD SRAM, 15 ns, PDSO28
64 K × 4 Static RAM with Separate IO CMOS for optimum speed/power
|
Cypress Semiconductor, Corp.
|
| KM64258E |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| C30616BQC-07-SC C30616EQC-07-SC C30617BST-07-SC C3 |
Ultrafast high voltage rectifier
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
Ultrafast rectifier PDP energy recovery
4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory
High voltage ultrafast diode
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
64 Kbit serial I²C bus EEPROM with hardware write control on top quarter of memory
1 Mbit serial I²C bus EEPROM
512 Kbit Serial SPI bus EEPROM with high speed clock
256 Kbit serial SPI bus EEPROM with high-speed clock
300V HYPERFAST RECTIFIER
HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION)
32 Kbit and 64 Kbit serial SPI bus EEPROMs with high-speed clock
(CRT TV horizontal deflection) high voltage damper diode
HIGH FREQUENCY SECONDARY RECTIFIERS
128 Kbit serial SPI bus EEPROM with high speed clock
4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 光电
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 光电
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 光电
16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock 光电
Ultrafast recovery - 1200 V diode 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 光电
Ultrafast recovery - high voltage diode 光电
Damper modulation diode for CRT TV 光电
DAMPER MODULATION DIODE FOR VIDEO 光电
4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection 光电
HIGH EFFICIENCY ULTRAFAST DIODE 光电
HIGH VOLTAGE ULTRAFAST RECTIFIER 光电
Ultrafast recovery diode 光电
|
ECS, Inc.
Microchip Technology, Inc.
TE Connectivity, Ltd.
DB Lectro, Inc.
Electronic Theatre Controls, Inc.
Samtec, Inc.
TriQuint Semiconductor, Inc.
Infineon Technologies AG
Allegro MicroSystems, Inc.
Rochester Electronics, LLC
|
| MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米（256亩8 / 128亩16）位闪存米（256亩8 / 128亩16）位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
| MC92305 MC92305CD |
16/32/64/128/256 QAM RECEIVER AND REED-SOLOMON DECODER 16/32/64/128/256的QAM接收器和Reed - Solomon解码
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| AT93C56AY1-10YU-1.8 AT93C56AY6-10YH-1.8 AT93C56A-1 |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
